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  k20p32m50sf0 k20 sub-family supports the following: mk20dn32vfm5, mk20dx32vfm5, mk20dn64vfm5, mk20dx64vfm5, mk20dn128vfm5, MK20DX128VFM5 features ? operating characteristics C voltage range: 1.71 to 3.6 v C flash write voltage range: 1.71 to 3.6 v C temperature range (ambient): -40 to 105c ? performance C up to 50 mhz arm cortex-m4 core with dsp instructions delivering 1.25 dhrystone mips per mhz ? memories and memory interfaces C up to 128 kb program flash. C up to 32 kb flexnvm on flexmemory devices C 2 kb flexram on flexmemory devices C up to 16 kb ram C serial programming interface (ezport) ? clocks C 3 to 32 mhz crystal oscillator C 32 khz crystal oscillator C multi-purpose clock generator ? system peripherals C multiple low-power modes to provide power optimization based on application requirements C 4-channel dma controller, supporting up to 41 request sources C external watchdog monitor C software watchdog C low-leakage wakeup unit ? security and integrity modules C hardware crc module to support fast cyclic redundancy checks C 128-bit unique identification (id) number per chip ? analog modules C 16-bit sar adc C two analog comparators (cmp) containing a 6-bit dac and programmable reference input ? timers C programmable delay block C eight-channel motor control/general purpose/pwm timer C two-channel quadrature decoder/general purpose timer C periodic interrupt timers C 16-bit low-power timer C carrier modulator transmitter C real-time clock ? communication interfaces C usb full-/low-speed on-the-go controller with on- chip transceiver C spi module C i2c module C two uart modules C i2s module freescale semiconductor document number: k20p32m50sf0 data sheet: technical data rev. 4 5/2012 freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. ? 2011C2012 freescale semiconductor, inc.
table of contents 1 ordering parts ........................................................................... 3 1.1 determining valid orderable parts...................................... 3 2 part identification ...................................................................... 3 2.1 description......................................................................... 3 2.2 format ............................................................................... 3 2.3 fields ................................................................................. 3 2.4 example ............................................................................ 4 3 terminology and guidelines ...................................................... 4 3.1 definition: operating requirement...................................... 4 3.2 definition: operating behavior ........................................... 5 3.3 definition: attribute ............................................................ 5 3.4 definition: rating ............................................................... 6 3.5 result of exceeding a rating .............................................. 6 3.6 relationship between ratings and operating requirements...................................................................... 6 3.7 guidelines for ratings and operating requirements............ 7 3.8 definition: typical value..................................................... 7 3.9 typical value conditions .................................................... 8 4 ratings ...................................................................................... 9 4.1 thermal handling ratings ................................................... 9 4.2 moisture handling ratings .................................................. 9 4.3 esd handling ratings ......................................................... 9 4.4 voltage and current operating ratings ............................... 9 5 general ..................................................................................... 10 5.1 ac electrical characteristics .............................................. 10 5.2 nonswitching electrical specifications ............................... 11 5.2.1 voltage and current operating requirements ......... 11 5.2.2 lvd and por operating requirements ................. 11 5.2.3 voltage and current operating behaviors .............. 12 5.2.4 power mode transition operating behaviors .......... 13 5.2.5 power consumption operating behaviors .............. 14 5.2.6 emc radiated emissions operating behaviors....... 18 5.2.7 designing with radiated emissions in mind ........... 19 5.2.8 capacitance attributes .......................................... 19 5.3 switching specifications..................................................... 19 5.3.1 device clock specifications ................................... 19 5.3.2 general switching specifications ........................... 20 5.4 thermal specifications ....................................................... 21 5.4.1 thermal operating requirements ........................... 21 5.4.2 thermal attributes ................................................. 21 6 peripheral operating requirements and behaviors .................... 22 6.1 core modules .................................................................... 22 6.1.1 jtag electricals .................................................... 22 6.2 system modules ................................................................ 25 6.3 clock modules ................................................................... 25 6.3.1 mcg specifications ............................................... 25 6.3.2 oscillator electrical specifications ......................... 27 6.3.3 32 khz oscillator electrical characteristics........... 29 6.4 memories and memory interfaces ..................................... 30 6.4.1 flash electrical specifications................................ 30 6.4.2 ezport switching specifications ............................ 34 6.5 security and integrity modules .......................................... 35 6.6 analog ............................................................................... 35 6.6.1 adc electrical specifications ................................. 35 6.6.2 cmp and 6-bit dac electrical specifications ......... 40 6.7 timers................................................................................ 43 6.8 communication interfaces ................................................. 43 6.8.1 usb electrical specifications ................................. 43 6.8.2 usb dcd electrical specifications ........................ 43 6.8.3 usb vreg electrical specifications ...................... 44 6.8.4 dspi switching specifications (limited voltage range) .................................................................... 44 6.8.5 dspi switching specifications (full voltage range). 46 6.8.6 i2c switching specifications .................................. 48 6.8.7 uart switching specifications .............................. 48 6.8.8 i2s/sai switching specifications .......................... 48 6.9 human-machine interfaces (hmi)...................................... 52 6.9.1 tsi electrical specifications ................................... 52 7 dimensions ............................................................................... 54 7.1 obtaining package dimensions ......................................... 54 8 pinout ........................................................................................ 54 8.1 k20 signal multiplexing and pin assignments .................. 54 8.2 k20 pinouts ....................................................................... 55 9 revision history ........................................................................ 56 k20 sub-family data sheet, rev. 4 5/2012. 2 freescale semiconductor, inc.
1 ordering parts 1.1 determining valid orderable parts valid orderable part numbers are provided on the web. to determine the orderable part numbers for this device, go to http://www.freescale.com and perform a part number search for the following device numbers: pk20 and mk20 . 2 part identification 2.1 description part numbers for the chip have fields that identify the specific part. you can use the values of these fields to determine the specific part you have received. 2.2 format part numbers for this device have the following format: q k## a m fff r t pp cc n 2.3 fields this table lists the possible values for each field in the part number (not all combinations are valid): field description values q qualification status m = fully qualified, general market flow p = prequalification k## kinetis family k20 a key attribute d = cortex-m4 w/ dsp f = cortex-m4 w/ dsp and fpu m flash memory type n = program flash only x = program flash and flexmemory table continues on the next page... rdering parts 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc.
field description values fff program flash memory size 32 = 32 kb 64 = 64 kb 128 = 128 kb 256 = 256 kb 512 = 512 kb 1m0 = 1 mb r silicon revision z = initial (blank) = main a = revision after main t temperature range (?c) v = 40 to 105 c = 40 to 85 pp package identifier fm = 32 qfn (5 mm x 5 mm) ft = 48 qfn (7 mm x 7 mm) lf = 48 lqfp (7 mm x 7 mm) lh = 64 lqfp (10 mm x 10 mm) mp = 64 mapbga (5 mm x 5 mm) lk = 80 lqfp (12 mm x 12 mm) mb = 81 mapbga (8 mm x 8 mm) ll = 100 lqfp (14 mm x 14 mm) ml = 104 mapbga (8 mm x 8 mm) mc = 121 mapbga (8 mm x 8 mm) lq = 144 lqfp (20 mm x 20 mm) md = 144 mapbga (13 mm x 13 mm) mj = 256 mapbga (17 mm x 17 mm) cc maximum cpu frequency (mhz) 5 = 50 mhz 7 = 72 mhz 10 = 100 mhz 12 = 120 mhz 15 = 150 mhz n packaging type r = tape and reel (blank) = trays 2.4 example this is an example part number: mk20dn32vfm5 3 terminology and guidelines terminology and guidelines k20 sub-family data sheet, rev. 4 5/2012. 4 freescale semiconductor, inc.
3.1 definition: operating requirement an operating requirement is a speciied value or range o values or a technical characteristic that you must guarantee during operation to avoid incorrect operation and possibly decreasing the useul lie o the chip ample his is an eample o an operating requirement hich you must meet or the accompanying operating behaviors to be guaranteed ymbol escription in a nit core supply voltage einition operating behavior n operating behavior is a speciied value or range o values or a technical characteristic that are guaranteed during operation i you meet the operating requirements and any other speciied conditions ample his is an eample o an operating behavior hich is guaranteed i you meet the accompanying operating requirements ymbol escription in a nit igital o ea pullup pulldon current einition ttribute n attribute is a speciied value or range o values or a technical characteristic that are guaranteed regardless o hether you meet the operating requirements erminology and guidelines ubamily ata heet ev reescale emiconductor nc
3.3.1 example this is an example of an attribute: symbol description min. max. unit cin_d input capacitance: digital pins 7 pf 3.4 definition: rating a rating is a minimum or maimum value o a technical characteristic that i eceeded may cause permanent chip ailure operating ratings apply during operation o the chip handling ratings apply hen the chip is not poered ample his is an eample o an operating rating ymbol escription in a nit core supply voltage esult o eceeding a rating easured characteristic operating rating ailures in time ppm he lielihood o permanent chip ailure increases rapidly as soon as a characteristic begins to eceed one o its operating ratings erminology and guidelines ubamily ata heet ev reescale emiconductor nc
3.6 relationship between ratings and operating requirements typical value is a speciied value or a technical characteristic that ies ithin the range o values speciied by the operating behavior iven the typical manuacturing process is representative o that characteristic during operation hen you meet the typicalvalue conditions or other speciied conditions ypical values are provided as design guidelines and are neither tested nor guaranteed erminology and guidelines ubamily ata heet ev reescale emiconductor nc
3.8.1 example 1 this is an example of an operating behavior that includes a typical value: symbol description min. typ. max. unit i wp digital i/o weak pullup/pulldown current 10 70 130 a 3.8.2 example 2 this is an example of a chart that shows typical values for various voltage and temperature conditions: 0.90 0.95 1.00 1.05 1.10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 150 ?c 105 ?c 25 ?c 40 ?c v dd (v) i (?a) dd_stop t j 3.9 typical value conditions typical values assume you meet the following conditions (or other conditions as specified): symbol description value unit t a ambient temperature 25 ?c v dd 3.3 v supply voltage 3.3 v terminology and guidelines k20 sub-family data sheet, rev. 4 5/2012. 8 freescale semiconductor, inc.
4 ratings 4.1 thermal handling ratings symbol description min. max. unit notes t stg storage temperature 55 150 ?c 1 t sdr solder temperature, lead-free 260 ?c 2 1. determined according to jedec standard jesd22-a103, high temperature storage life . 2. determined according to ipc/jedec standard j-std-020, moisture/reflow sensitivity classification for nonhermetic solid state surface mount devices . .2 moisture handling ratings symbol description min. max. nit notes msl moisture sensitivity level 1 1. determined according to ipc/jedec standard j-std-020, moisture/reflow sensitivity classification for nonhermetic solid state surface mount devices . . esd handling ratings symbol description min. max. nit notes hbm electrostatic discharge voltage, human body model -2000 2000 1 cdm electrostatic discharge voltage, charged-device model -500 500 2 i lat latch-up current at ambient temperature of 105c -100 100 ma 1. determined according to jedec standard jesd22-a11, electrostatic discharge (esd) sensitivity testing human body model (hbm) . 2. determined according to jedec standard jesd22-c101, field-induced charged-device model test method for electrostatic-discharge-withstand thresholds of microelectronic components . . oltage and current operating ratings symbol description min. max. nit dd digital supply voltage 0. . table continues on the next page... ratings 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc.
symbol description min. max. unit i dd digital supply current 155 ma v dio digital input voltage (except reset, extal, and xtal) 0.3 v dd + 0.3 v v aio analog 1 , reset, extal, and xtal input voltage 0.3 v dd + 0.3 v i d maximum current single pin limit (applies to all port pins) 25 25 ma v dda analog supply voltage v dd 0.3 v dd + 0.3 v v usb_dp usb_dp input voltage 0.3 3.63 v v usb_dm usb_dm input voltage 0.3 3.63 v vregin usb regulator input 0.3 6.0 v v bat rtc battery supply voltage 0.3 3.8 v 1. analog pins are defined as pins that do not have an associated general purpose i/o port function. 5 general 5.1 ac electrical characteristics unless otherwise specified, propagation delays are measured from the 50% to the 50% point, and rise and fall times are measured at the 20% and 80% points, as shown in the following figure. figure 1. input signal measurement reference all digital i/o switching characteristics assume: 1. output pins ? have c l =30pf loads, ? are configured for fast slew rate (portx_pcrn[sre]=0), and ? are configured for high drive strength (portx_pcrn[dse]=1) 2. input pins ? have their passive filter disabled (portx_pcrn[pfe]=0) general k20 sub-family data sheet, rev. 4 5/2012. 10 freescale semiconductor, inc.
5.2 nonswitching electrical specifications 5.2.1 voltage and current operating requirements table 1. voltage and current operating requirements symbol description min. max. unit notes v dd supply voltage 1.71 3.6 v v dda analog supply voltage 1.71 3.6 v v dd v dda v dd -to-v dda differential voltage 0.1 0.1 v v ss v ssa v ss -to-v ssa differential voltage 0.1 0.1 v v bat rtc battery supply voltage 1.71 3.6 v v ih input high voltage 2.7 v ? v dd ? 3.6 v 1.7 v ? v dd ? 2.7 v 0.7 v dd 0.75 v dd v v v il input low voltage 2.7 v ? v dd ? 3.6 v 1.7 v ? v dd ? 2.7 v 0.35 v dd 0.3 v dd v v v hys input hysteresis 0.06 v dd v i icio i/o pin dc injection current single pin v in < v ss -0.3v (negative current injection) v in > v dd +0.3v (positive current injection) -3 +3 ma 1 i iccont contiguous pin dc injection current regional limit, includes sum of negative injection currents or sum of positive injection currents of 16 contiguous pins negative current injection positive current injection -25 +25 ma v ram v dd voltage required to retain ram 1.2 v v rfvbat v bat voltage required to retain the vbat register file v por_vbat v 1. all analog pins are internally clamped to v ss and v dd through esd protection diodes. if v in is greater than v aio_min (=v ss -0.3v) and v in is less than v aio_max (=v dd +0.3v) is observed, then there is no need to provide current limiting resistors at the pads. if these limits cannot be observed then a current limiting resistor is required. the negative dc injection current limiting resistor is calculated as r=(v aio_min -v in )/|i ic |. the positive injection current limiting resistor is calcualted as r=(v in -v aio_max )/|i ic |. select the larger of these two calculated resistances. general k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 11
5.2.2 lvd and por operating requirements table 2. v dd supply lvd and por operating requirements symbol description min. typ. max. unit notes v por falling vdd por detect voltage 0.8 1.1 1.5 v v lvdh falling low-voltage detect threshold high range (lvdv=01) 2.48 2.56 2.64 v v lvw1h v lvw2h v lvw3h v lvw4h low-voltage warning thresholds high range level 1 falling (lvwv=00) level 2 falling (lvwv=01) level 3 falling (lvwv=10) level 4 falling (lvwv=11) 2.62 2.72 2.82 2.92 2.70 2.80 2.90 3.00 2.78 2.88 2.98 3.08 v v v v 1 v hysh low-voltage inhibit reset/recover hysteresis high range 80 mv v lvdl falling low-voltage detect threshold low range (lvdv=00) 1.54 1.60 1.66 v v lvw1l v lvw2l v lvw3l v lvw4l low-voltage warning thresholds low range level 1 falling (lvwv=00) level 2 falling (lvwv=01) level 3 falling (lvwv=10) level 4 falling (lvwv=11) 1.74 1.84 1.94 2.04 1.80 1.90 2.00 2.10 1.86 1.96 2.06 2.16 v v v v 1 v hysl low-voltage inhibit reset/recover hysteresis low range 60 mv v bg bandgap voltage reference 0.97 1.00 1.03 v t lpo internal low power oscillator period factory trimmed 900 1000 1100 ?s 1. rising thresholds are falling threshold + hysteresis voltage table 3. vbat power operating requirements symbol description min. typ. max. unit notes v por_vbat falling vbat supply por detect voltage 0.8 1.1 1.5 v general k20 sub-family data sheet, rev. 4 5/2012. 12 freescale semiconductor, inc.
5.2.3 voltage and current operating behaviors table 4. voltage and current operating behaviors symbol description min. max. unit notes v oh output high voltage high drive strength 2.7 v ? v dd ? 3.6 v, i oh = - 9 ma 1.71 v ? v dd ? 2.7 v, i oh = -3 ma v dd 0.5 v dd 0.5 v v output high voltage low drive strength 2.7 v ? v dd ? 3.6 v, i oh = -2 ma 1.71 v ? v dd ? 2.7 v, i oh = -0.6 ma v dd 0.5 v dd 0.5 v v i oht output high current total for all ports 100 ma v ol output low voltage high drive strength 2.7 v ? v dd ? 3.6 v, i ol = 9 ma 1.71 v ? v dd ? 2.7 v, i ol = 3 ma 0.5 0.5 v v output low voltage low drive strength 2.7 v ? v dd ? 3.6 v, i ol = 2 ma 1.71 v ? v dd ? 2.7 v, i ol = 0.6 ma 0.5 0.5 v v i olt output low current total for all ports 100 ma i in input leakage current (per pin) @ full temperature range @ 25 ?c 1.0 0.1 ?a ?a 1 i oz hi-z (off-state) leakage current (per pin) 1 ?a i oz total hi-z (off-state) leakage current (all input pins) 4 ?a r pu internal pullup resistors 22 50 k? 2 r pd internal pulldown resistors 22 50 k? 3 1. tested by ganged leakage method 2. measured at vinput = v ss 3. measured at vinput = v dd 5.2.4 power mode transition operating behaviors all specifications except t por , and vllsx
table 5. power mode transition operating behaviors symbol description min. max. unit notes t por after a por event, amount of time from the point v dd reaches 1.71 v to execution of the first instruction across the operating temperature range of the chip. 300 ?s 1 vlls0 table continues on the next page... general 20 sub-family data sheet, rev. 5/2012. 1 freescale semiconductor, inc.
table 6. power consumption operating behaviors (continued) symbol description min. typ. max. unit notes i dd_vlpr very-low-power run mode current at 3.0 v all peripheral clocks disabled 867 ?a 6 i dd_vlpr very-low-power run mode current at 3.0 v all peripheral clocks enabled 1.1 ma 7 i dd_vlpw very-low-power wait mode current at 3.0 v 509 ?a 8 i dd_stop stop mode current at 3.0 v @ 40 to 25?c @ 70?c @ 105?c 310 384 629 426 458 1100 ?a ?a ?a i dd_vlps very-low-power stop mode current at 3.0 v @ 40 to 25?c @ 70?c @ 105?c 3.5 20.7 85 22.6 52.9 220 ?a ?a ?a i dd_lls low leakage stop mode current at 3.0 v @ 40 to 25?c @ 70?c @ 105?c 2.1 7.7 32.2 3.7 43.1 68 ?a ?a ?a i dd_vlls3 very low-leakage stop mode 3 current at 3.0 v @ 40 to 25?c @ 70?c @ 105?c 1.5 4.8 20 2.9 22.5 37.8 ?a ?a ?a i dd_vlls2 very low-leakage stop mode 2 current at 3.0 v @ 40 to 25?c @ 70?c @ 105?c 1.4 4.1 17.3 2.8 19.2 32.4 ?a ?a ?a i dd_vlls1 very low-leakage stop mode 1 current at 3.0 v @ 40 to 25?c @ 70?c @ 105?c 0.678 2.8 13.6 1.3 13.6 24.5 ?a ?a ?a i dd_vlls0 very low-leakage stop mode 0 current at 3.0 v with por detect circuit enabled @ 40 to 25?c @ 70?c @ 105?c 0.367 2.4 13.2 1.0 13.3 24.1 ?a ?a ?a table continues on the next page... general 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 15
table 6. power consumption operating behaviors (continued) symbol description min. typ. max. unit notes i dd_vlls0 very low-leakage stop mode 0 current at 3.0 v with por detect circuit disabled @ 40 to 25?c @ 70?c @ 105?c 0.176 2.2 13 0.859 13.1 23.9 ?a ?a ?a i dd_vbat average current with rtc and 32khz disabled at 3.0 v @ 40 to 25?c @ 70?c @ 105?c 0.19 0.49 2.2 0.22 0.64 3.2 ?a ?a ?a i dd_vbat average current when cpu is not accessing rtc registers @ 1.8v @ 40 to 25?c @ 70?c @ 105?c @ 3.0v @ 40 to 25?c @ 70?c @ 105?c 0.57 0.90 2.4 0.67 1.0 2.7 0.67 1.2 3.5 0.94 1.4 3.9 ?a ?a ?a ?a ?a ?a 9 1. the analog supply current is the sum of the active or disabled current for each of the analog modules on the device. see each module?s specification for its supply current. 2. 50mhz core and system clock, 25mhz bus clock, and 25mhz flash clock . mcg configured for fei mode. all peripheral clocks disabled. 3. 50mhz core and system clock, 25mhz bus clock, and 25mhz flash clock. mcg configured for fei mode. all peripheral clocks enabled, and peripherals are in active operation. 4. max values are measured with cpu executing dsp instructions 5. 25mhz core and system clock, 25mhz bus clock, and 12.5mhz flash clock. mcg configured for fei mode. 6. 4 mhz core, system, and bus clock and 1mhz flash clock. mcg configured for blpe mode. all peripheral clocks disabled. code executing from flash. 7. 4 mhz core, system, and bus clock and 1mhz flash clock. mcg configured for blpe mode. all peripheral clocks enabled but peripherals are not in active operation. code executing from flash. 8. 4 mhz core, system, and bus clock and 1mhz flash clock. mcg configured for blpe mode. all peripheral clocks disabled. 9. includes 32khz oscillator current and rtc operation. 5.2.5.1 diagram: typical idd_run operating behavior the following data was measured under these conditions: ? mcg in fbe mode ? usb regulator disabled ? no gpios toggled general k20 sub-family data sheet, rev. 4 5/2012. 16 freescale semiconductor, inc.
? code execution from flash with cache enabled ? for the alloff curve, all peripheral clocks are disabled except ftfl figure 2. run mode supply current vs. core frequency general k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 17
figure 3. vlpr mode supply current vs. core frequency 5.2.6 emc radiated emissions operating behaviors table 7. emc radiated emissions operating behaviors for 64lqfp symbol description frequency band (mhz) typ. unit notes v re1 radiated emissions voltage, band 1 0.1550 19 db?v 1 , 2 v re2 radiated emissions voltage, band 2 50150 21 db?v v re3 radiated emissions voltage, band 3 150500 19 db?v v re4 radiated emissions voltage, band 4 5001000 11 db?v v re_iec iec level 0.151000 l 2 , 3 1. determined according to iec standard 61967-1, integrated circuits - measurement of electromagnetic emissions, 150 khz to 1 ghz part 1: general conditions and definitions and iec standard 1-2, integrated circuits - measurement of electromagnetic emissions, 150 khz to 1 ghz part 2: measurement of radiated emissionstem cell and wideband tem cell method . measurements were made while the microcontroller was running basic application code. the reported general 20 sub-family data sheet, rev. 5/2012. 1 freescale semiconductor, inc.
emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the measured orientations in each frequency range. 2. v dd = 3.3 v, t a = 25 ?c, f osc = 12 mhz (crystal), f sys = 48 mhz, f bus = 48mhz 3. specified according to annex d of iec standard 61967-2, measurement of radiated emissionstem cell and wideband tem cell method 5.2. designing with radiated emissions in mind to find application notes that provide guidance on designing your system to minimize interference from radiated emissions: 1. go to http://www.freescale.com . 2. perform a keyword search for emc design. 5.2. capacitance attributes table . capacitance attributes symbol description min. max. nit c ina input capacitance: analog pins pf c ind input capacitance: digital pins pf 5. switching specifications 5..1 device clock specifications table . device clock specifications symbol description min. max. nit notes normal run mode f ss system and core clock 50 mhz f sssb system and core clock when full speed sb in operation 20 mhz f bs bus clock 50 mhz f flash flash clock 25 mhz f lptmr lptmr clock 25 mhz lpr mode 1 f ss system and core clock mhz f bs bus clock mhz table continues on the next page... general 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 1
table 9. device clock specifications (continued) symbol description min. max. unit notes f flash flash clock 1 mhz f erclk external reference clock 16 mhz f lptmr_pin lptmr clock 25 mhz f lptmr_erclk lptmr external reference clock 16 mhz f i2s_mclk i2s master clock 12.5 mhz f i2s_bclk i2s bit clock 4 mhz 1. the frequency limitations in vlpr mode here override any frequency specification listed in the timing specification for any other module. 5.3.2 general switching specifications these general purpose specifications apply to all signals configured for gpio, uart, cmt, and i 2 c signals. table 10. general switching specifications symbol description min. max. unit notes gpio pin interrupt pulse width (digital glitch filter disabled) synchronous path 1.5 bus clock cycles 1 , 2 gpio pin interrupt pulse width (digital glitch filter disabled, analog filter enabled) asynchronous path 100 ns 3 gpio pin interrupt pulse width (digital glitch filter disabled, analog filter disabled) asynchronous path 50 ns 3 external reset pulse width (digital glitch filter disabled) 100 ns 3 mode select ( ezp_cs) hold time after reset deassertion 2 bus clock cycles port rise and fall time (high drive strength) slew disabled 1.71 ? v dd ? 2.7v 2.7 ? v dd ? 3.6v slew enabled 1.71 ? v dd ? 2.7v 2.7 ? v dd ? 3.6v 13 7 36 24 ns ns ns ns 4 table continues on the next page... general 20 sub-family data sheet, rev. 5/2012. 20 freescale semiconductor, inc.
table 10. general switching specifications (continued) symbol description min. max. unit notes port rise and fall time (low drive strength) slew disabled 1.71 ? v dd ? 2.7v 2.7 ? v dd ? 3.6v slew enabled 1.71 ? v dd ? 2.7v 2.7 ? v dd ? 3.6v 12 6 36 24 ns ns ns ns 5 1. this is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. shorter pulses may or may not be recognized. in stop, vlps, lls, and vllsx modes, the synchronizer is bypassed so shorter pulses can be recognized in that case. 2. the greater synchronous and asynchronous timing must be met. 3. this is the minimum pulse width that is guaranteed to be recognized as a pin interrupt request in stop, vlps, lls, and vllsx modes. 4. 75pf load 5. 15pf load 5.4 thermal specifications 5.4.1 thermal operating requirements table 11. thermal operating requirements symbol description min. max. unit t j die junction temperature 40 125 ?c t a ambient temperature 40 105 ?c 5.4.2 thermal attributes board type symbol description 32 qfn unit notes single-layer (1s) r table continues on the next page... general 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 21
board type symbol description 32 qfn unit notes single-layer (1s) r integrated circuits thermal test method environmental conditionsnatural convection (still air) with the single layer board horizontal. for the lfp, the board meets the jesd51- specification. for the mapbga, the board meets the jesd51- specification. . determined according to jedec standard jesd51-, integrated circuits thermal test method environmental conditionsforced convection (moving air) with the board horizontal. 5. determined according to jedec standard jesd51-, integrated circuit thermal test method environmental conditionsjunction-to-board . board temperature is measured on the top surface of the board near the package. . determined according to method 1012.1 of mil-std , test method standard, microcircuits , with the cold plate temperature used for the case temperature. the value includes the thermal resistance of the interface material between the top of the package and the cold plate. . determined according to jedec standard jesd51-2, integrated circuits thermal test method environmental conditionsnatural convection (still air) . peripheral operating reuirements and behaviors .1 core modules .1.1 jtag electricals table 12. jtag voltage range electricals symbol description min. max. nit perating voltage 2. 5.5 table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. 22 freescale semiconductor, inc.
table 12. jtag voltage range electricals (continued) symbol description min. max. unit j1 tclk frequency of operation jtag cjtag 10 5 mhz j2 tclk cycle period 1/j1 ns j3 tclk clock pulse width jtag cjtag 100 200 ns ns ns j4 tclk rise and fall times 1 ns j5 tms input data setup time to tclk rise jtag cjtag 53 112 ns j6 tdi input data setup time to tclk rise 8 ns j7 tms input data hold time after tclk rise jtag cjtag 3.4 3.4 ns j8 tdi input data hold time after tclk rise 3.4 ns j9 tclk low to tms data valid jtag cjtag 48 85 ns j10 tclk low to tdo data valid 48 ns j11 output data hold/invalid time after clock edge 1 3 ns 1. they are common for jtag and cjtag. input transition = 1 ns and output load = 50pf j2 j3 j3 j4 j4 tclk (input) figure 4. test clock input timing peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 23
j7 j8 j7 j5 j6 input data valid output data valid output data valid tclk data inputs data outputs data outputs data outputs figure 5. boundary scan (jtag) timing j11 j12 j11 j9 j10 input data valid output data valid output data valid tclk tdi/tms tdo tdo tdo figure 6. test access port timing peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. 24 freescale semiconductor, inc.
j14 j13 tclk trst figure 7. trst timing 6.2 system modules there are no specifications necessary for the devices system modules. 6.3 clock modules 6.3.1 mcg specifications table 13. mcg specifications symbol description min. typ. max. unit notes f ints_ft internal reference frequency (slow clock) factory trimmed at nominal vdd and 25 ?c 32.768 khz f ints_t internal reference frequency (slow clock) user trimmed 31.25 39.0625 khz table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 25
table 13. mcg specifications (continued) symbol description min. typ. max. unit notes f fll_ref fll reference frequency range 31.25 39.0625 khz f dco dco output frequency range low range (drs=00) 640 f fll_ref 20 20.97 25 mhz 2 , 3 mid range (drs=01) 1280 f fll_ref 40 41.94 50 mhz mid-high range (drs=10) 1920 f fll_ref 60 62.91 75 mhz high range (drs=11) 2560 f fll_ref 80 83.89 100 mhz f dco_t_dmx3 2 dco output frequency low range (drs=00) 732 f fll_ref 23.99 mhz 4 , 5 mid range (drs=01) 1464 f fll_ref 47.97 mhz mid-high range (drs=10) 2197 f fll_ref 71.99 mhz high range (drs=11) 2929 f fll_ref 95.98 mhz j cyc_fll fll period jitter f vco = 48 mhz f vco = 98 mhz 180 150 ps t fll_acquire fll target frequency acquisition time 1 ms 6 pll f vco vco operating frequency 48.0 100 mhz i pll pll operating current pll @ 96 mhz (f osc_hi_1 = 8 mhz, f pll_ref = 2 mhz, vdiv multiplier = 48) 1060 a 7 i pll pll operating current pll @ 48 mhz (f osc_hi_1 = 8 mhz, f pll_ref = 2 mhz, vdiv multiplier = 24) 600 a 7 f pll_ref pll reference frequency range 2.0 4.0 mhz j cyc_pll pll period jitter (rms) f vco = 48 mhz f vco = 100 mhz 120 50 ps ps 8 table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. 2 freescale semiconductor, inc.
table 13. mcg specifications (continued) symbol description min. typ. max. unit notes j acc_pll pll accumulated jitter over 1s (rms) f vco = 48 mhz f vco = 100 mhz 1350 600 ps ps 8 d lock lock entry frequency tolerance 1.49 2.98 % d unl lock exit frequency tolerance 4.47 5.97 % t pll_lock lock detector detection time 150 10 -6 + 1075(1/ f pll_ref ) s 9 1. this parameter is measured with the internal reference (slow clock) being used as a reference to the fll (fei clock mode). 2. these typical values listed are with the slow internal reference clock (fei) using factory trim and dmx32=0. 3. the resulting system clock frequencies should not exceed their maximum specified values. the dco frequency deviation ( table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 2
table 14. oscillator dc electrical specifications (continued) symbol description min. typ. max. unit notes i ddosc supply current high gain mode (hgo=1) 32 khz 4 mhz 8 mhz (range=01) 16 mhz 24 mhz 32 mhz 25 400 500 2.5 3 4 ?a ?a ?a ma ma ma 1 c x extal load capacitance 2 , 3 c y xtal load capacitance 2 , 3 r f feedback resistor low-frequency, low-power mode (hgo=0) m? 2 , 4 feedback resistor low-frequency, high-gain mode (hgo=1) 10 m? feedback resistor high-frequency, low-power mode (hgo=0) m? feedback resistor high-frequency, high-gain mode (hgo=1) 1 m? r s series resistor low-frequency, low-power mode (hgo=0) k? series resistor low-frequency, high-gain mode (hgo=1) 200 k? series resistor high-frequency, low-power mode (hgo=0) k? series resistor high-frequency, high-gain mode (hgo=1) 0 k? v pp 5 peak-to-peak amplitude of oscillation (oscillator mode) low-frequency, low-power mode (hgo=0) 0.6 v peak-to-peak amplitude of oscillation (oscillator mode) low-frequency, high-gain mode (hgo=1) v dd v peak-to-peak amplitude of oscillation (oscillator mode) high-frequency, low-power mode (hgo=0) 0.6 v peak-to-peak amplitude of oscillation (oscillator mode) high-frequency, high-gain mode (hgo=1) v dd v 1. v dd =3.3 v, temperature =25 ?c 2. see crystal or resonator manufacturer?s recommendation 3. c x ,c y can be provided by using either the integrated capacitors or by using external components. 4. when low power mode is selected, r f is integrated and must not be attached externally. peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. 28 freescale semiconductor, inc.
5. the extal and xtal pins should only be connected to required oscillator components and must not be connected to any other devices. 6.3.2.2 oscillator frequency specifications table 15. oscillator frequency specifications symbol description min. typ. max. unit notes f osc_lo oscillator crystal or resonator frequency low frequency mode (mcg_c2[range]=00) 32 40 khz f osc_hi_1 oscillator crystal or resonator frequency high frequency mode (low range) (mcg_c2[range]=01) 3 8 mhz f osc_hi_2 oscillator crystal or resonator frequency high frequency mode (high range) (mcg_c2[range]=1x) 8 32 mhz f ec_extal input clock frequency (external clock mode) 50 mhz 1 , 2 t dc_extal input clock duty cycle (external clock mode) 40 50 60 % t cst crystal startup time 32 khz low-frequency, low-power mode (hgo=0) 750 ms 3 , 4 crystal startup time 32 khz low-frequency, high-gain mode (hgo=1) 250 ms crystal startup time 8 mhz high-frequency (mcg_c2[range]=01), low-power mode (hgo=0) 0.6 ms crystal startup time 8 mhz high-frequency (mcg_c2[range]=01), high-gain mode (hgo=1) 1 ms 1. other frequency limits may apply when external clock is being used as a reference for the fll or pll. 2. when transitioning from fbe to fei mode, restrict the frequency of the input clock so that, when it is divided by frdiv, it remains within the limits of the dco input clock frequency. 3. proper pc board layout procedures must be followed to achieve specifications. 4. crystal startup time is defined as the time between the oscillator being enabled and the oscinit bit in the mcg_s register being set. 6.3.3 32 khz oscillator electrical characteristics this section describes the module electrical characteristics. 6.3.3.1 32 khz oscillator dc electrical specifications table 16. 32khz oscillator dc electrical specifications symbol description min. typ. max. unit v bat supply voltage 1.71 3.6 v r f internal feedback resistor 100 m? table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 2
table 16. 32khz oscillator dc electrical specifications (continued) symbol description min. typ. max. unit c para parasitical capacitance of extal32 and xtal32 5 7 pf v pp 1 peak-to-peak amplitude of oscillation 0.6 v 1. when a crystal is being used with the 32 khz oscillator, the extal32 and xtal32 pins should only be connected to required oscillator components and must not be connected to any other devices. 6.3.3.2 32khz oscillator frequency specifications table 17. 32khz oscillator frequency specifications symbol description min. typ. max. unit notes f osc_lo oscillator crystal 32.768 khz t start crystal start-up time 1000 ms 1 f ec_extal32 externally provided input clock frequency 32.768 khz 2 v ec_extal32 externally provided input clock amplitude 700 v bat mv 2 , 3 1. proper pc board layout procedures must be followed to achieve specifications. 2. this specification is for an externally supplied clock driven to extal32 and does not apply to any other clock input. the oscillator remains enabled and xtal32 must be left unconnected. 3. the parameter specified is a peak-to-peak value and v ih and v il specifications do not apply. the voltage of the applied clock must be within the range of v ss to v bat . 6.4 memories and memory interfaces 6.4.1 flash electrical specifications this section describes the electrical characteristics of the flash memory module. 6.4.1.1 flash timing specifications program and erase the following specifications represent the amount of time the internal charge pumps are active and do not include command overhead. table 18. nvm program/erase timing specifications symbol description min. typ. max. unit notes t hvpgm4 longword program high-voltage time 7.5 18 ?s t hversscr sector erase high-voltage time 13 113 ms 1 t hversblk32k erase block high-voltage time for 32 kb 52 452 ms 1 t hversblk128k erase block high-voltage time for 128 kb 52 452 ms 1 1. maximum time based on expectations at cycling end-of-life. peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. 30 freescale semiconductor, inc.
6.4.1.2 flash timing specifications commands table 19. flash command timing specifications symbol description min. typ. max. unit notes t rd1blk32k t rd1blk128k read 1s block execution time 32 kb data flash 128 kb program flash 0.5 1.7 ms ms t rd1sec1k read 1s section execution time (flash sector) 60 ?s 1 t pgmchk program check execution time 45 ?s 1 t rdrsrc read resource execution time 30 ?s 1 t pgm4 program longword execution time 65 145 ?s t ersblk32k t ersblk128k erase flash block execution time 32 kb data flash 128 kb program flash 55 61 465 495 ms ms 2 t ersscr erase flash sector execution time 14 114 ms 2 t pgmsec512 t pgmsec1k program section execution time 512 b flash 1 kb flash 4.7 9.3 ms ms t rd1all read 1s all blocks execution time 1.8 ms t rdonce read once execution time 25 ?s 1 t pgmonce program once execution time 65 ?s t ersall erase all blocks execution time 115 1000 ms 2 t vfykey verify backdoor access key execution time 30 ?s 1 t pgmpart32k program partition for eeprom execution time 32 kb flexnvm 70 ms t setramff t setram8k t setram32k set flexram function execution time: control code 0xff 8 kb eeprom backup 32 kb eeprom backup 50 0.3 0.7 0.5 1.0 ?s ms ms byte-write to flexram for eeprom operation t eewr8bers byte-write to erased flexram location execution time 175 260 ?s 3 t eewr8b8k t eewr8b16k t eewr8b32k byte-write to flexram execution time: 8 kb eeprom backup 16 kb eeprom backup 32 kb eeprom backup 340 385 475 1700 1800 2000 ?s ?s ?s table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 1
table 19. flash command timing specifications (continued) symbol description min. typ. max. unit notes word-write to flexram for eeprom operation t eewr16bers word-write to erased flexram location execution time 175 260 ?s t eewr16b8k t eewr16b16k t eewr16b32k word-write to flexram execution time: 8 kb eeprom backup 16 kb eeprom backup 32 kb eeprom backup 340 385 475 1700 1800 2000 ?s ?s ?s longword-write to flexram for eeprom operation t eewr32bers longword-write to erased flexram location execution time 360 540 ?s t eewr32b8k t eewr32b16k t eewr32b32k longword-write to flexram execution time: 8 kb eeprom backup 16 kb eeprom backup 32 kb eeprom backup 545 630 810 1950 2050 2250 ?s ?s ?s 1. assumes 25mhz flash clock frequency. 2. maximum times for erase parameters based on expectations at cycling end-of-life. 3. for byte-writes to an erased flexram location, the aligned word containing the byte must be erased. 6.4.1.3 flash high voltage current behaviors table 20. flash high voltage current behaviors symbol description min. typ. max. unit i dd_pgm average current adder during high voltage flash programming operation 2.5 6.0 ma i dd_ers average current adder during high voltage flash erase operation 1.5 4.0 ma 6.4.1.4 reliability specifications table 21. nvm reliability specifications symbol description min. typ. 1 max. unit notes program flash t nvmretp10k data retention after up to 10 k cycles 5 50 years t nvmretp1k data retention after up to 1 k cycles 20 100 years n nvmcycp cycling endurance 10 k 50 k cycles 2 data flash t nvmretd10k data retention after up to 10 k cycles 5 50 years table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. 2 freescale semiconductor, inc.
table 21. nvm reliability specifications (continued) symbol description min. typ. 1 max. unit notes t nvmretd1k data retention after up to 1 k cycles 20 100 years n nvmcycd cycling endurance 10 k 50 k cycles 2 flexram as eeprom t nvmretee100 data retention up to 100% of write endurance 5 50 years t nvmretee10 data retention up to 10% of write endurance 20 100 years n nvmwree16 n nvmwree128 n nvmwree512 n nvmwree4k n nvmwree8k write endurance eeprom backup to flexram ratio = 16 eeprom backup to flexram ratio = 128 eeprom backup to flexram ratio = 512 eeprom backup to flexram ratio = 4096 eeprom backup to flexram ratio = 8192 35 k 315 k 1.27 m 10 m 20 m 175 k 1.6 m 6.4 m 50 m 100 m writes writes writes writes writes 3 1. typical data retention values are based on measured response accelerated at high temperature and derated to a constant 25?c use profile. engineering bulletin eb618 does not apply to this technology. typical endurance defined in engineering bulletin eb619. 2. cycling endurance represents number of program/erase cycles at -40?c ? t j ? 125?c. 3. write endurance represents the number of writes to each flexram location at -40?c ?tj ? 125?c influenced by the cycling endurance of the flexnvm (same value as data flash) and the allocated eeprom backup. minimum and typical values assume all byte-writes to flexram. 6.4.1.5 write endurance to flexram for eeprom when the flexnvm partition code is not set to full data flash, the eeprom data set size can be set to any of several non-zero values. the bytes not assigned to data flash via the flexnvm partition code are used by the flash memory module to obtain an effective endurance increase for the eeprom data. the built-in eeprom record management system raises the number of program/erase cycles that can be attained prior to device wear-out by cycling the eeprom data through a larger eeprom nvm storage space. while different partitions of the flexnvm are available, the intention is that a single choice for the flexnvm partition code and eeprom data set size is used throughout the entire lifetime of a given application. the eeprom endurance equation and graph shown below assume that only one configuration is ever used. writes_flexram = write_efficiency n eeprom 2 eeesize eeesize nvmcycd where ? writes_flexram ? minimum number of writes to each flexram location peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 33
? eeprom ? allocated flexnvm based on depart; entered with the program partition command ? eeesize ? allocated flexram based on depart; entered with the program partition command ? write_efficiency ? ? 0.25 for 8-bit writes to flexram ? 0.50 for 16-bit or 32-bit writes to flexram ? n nvmcycd ? data flash cycling endurance (the following graph assumes 10,000 cycles) figure 8. eeprom backup writes to flexram 6.4.2 ezport switching specifications table 22. ezport switching specifications num description min. max. unit operating voltage 1.71 3.6 v table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc.
table 22. ezport switching specifications (continued) num description min. max. unit ep1 ezp_ck frequency of operation (all commands except read) f sys /2 mhz ep1a ezp_ck frequency of operation (read command) f sys /8 mhz ep2 ezp_cs negation to next ezp_cs assertion 2 x t ezp_ck ns ep3 ezp_cs input valid to ezp_ck high (setup) 5 ns ep4 ezp_ck high to ezp_cs input invalid (hold) 5 ns ep5 ezp_d input valid to ezp_ck high (setup) 2 ns ep6 ezp_ck high to ezp_d input invalid (hold) 5 ns ep7 ezp_ck low to ezp_q output valid 17 ns ep8 ezp_ck low to ezp_q output invalid (hold) 0 ns ep9 ezp_cs negation to ezp_q tri-state 12 ns ep2 ep3 ep4 ep5 ep6 ep7 ep8 ep9 ezp_ck ezp_cs ezp_q (output) ezp_d (input) figure 9. ezport timing diagram 6.5 security and integrity modules there are no specifications necessary for the devices security and integrity modules. 6.6 analog peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 35
6.6.1 adc electrical specifications the 16-bit accuracy specifications listed in table 23 and table 24 are achievable on the differential pins adcx_dp0, adcx_dm0. all other adc channels meet the 13-bit differential/12-bit single-ended accuracy specifications. 6.6.1.1 16-bit adc operating conditions table 23. 16-bit adc operating conditions symbol description conditions min. typ. 1 max. unit notes v dda supply voltage absolute 1.71 3.6 v table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc.
table 23. 16-bit adc operating conditions (continued) symbol description conditions min. typ. 1 max. unit notes c rate adc conversion rate 16 bit modes no adc hardware averaging continuous conversions enabled, subsequent conversion time 37.037 461.467 ksps 5 1. typical values assume v dda = 3.0 v, temp = 25?c, f adck = 1.0 mhz unless otherwise stated. typical values are for reference only and are not tested in production. 2. dc potential difference. 3. this resistance is external to mcu. the analog source resistance should be kept as low as possible in order to achieve the best results. the results in this datasheet were derived from a system which has <8 ? analog source resistance. the r as / c as time constant should be kept to <1ns. 4. to use the maximum adc conversion clock frequency, the adhsc bit should be set and the adlpc bit should be clear. 5. for guidelines and examples of conversion rate calculation, download the adc calculator tool: http://cache.freescale.com/ files/soft_dev_tools/software/app_software/converters/adc_calculator_cnv.zip?fpsp=1 r as v as c as z as v adin z adin r adin r adin r adin r adin c adin input pin input pin input pin input pin table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc.
table 24. 16-bit adc characteristics (v refh = v dda , v refl = v ssa ) (continued) symbol description conditions 1 min. typ. 2 max. unit notes f adack adc asynchronous clock source adlpc=1, adhsc=0 adlpc=1, adhsc=1 adlpc=0, adhsc=0 adlpc=0, adhsc=1 1.2 3.0 2.4 4.4 2.4 4.0 5.2 6.2 3.9 7.3 6.1 9.5 mhz mhz mhz mhz t adack = 1/ f adack sample time see reference manual chapter for sample times tue total unadjusted error 12 bit modes <12 bit modes 4 1.4 6.8 2.1 lsb 4 5 dnl differential non- linearity 12 bit modes <12 bit modes 0.7 0.2 -1.1 to +1.9 -0.3 to 0.5 lsb 4 5 inl integral non- linearity 12 bit modes <12 bit modes 1.0 0.5 -2.7 to +1.9 -0.7 to +0.5 lsb 4 5 e fs full-scale error 12 bit modes <12 bit modes -4 -1.4 -5.4 -1.8 lsb 4 v adin = v dda 5 e q quantization error 16 bit modes bit modes -1 to 0 0.5 lsb 4 enob effective number of bits 16 bit differential mode avg=32 avg=4 16 bit single-ended mode avg=32 avg=4 12.8 11.9 12.2 11.4 14.5 13.8 13.9 13.1 bits bits bits bits 6 sinad signal-to-noise plus distortion see enob 6.02 enob + 1.76 db thd total harmonic distortion 16 bit differential mode avg=32 16 bit single-ended mode avg=32 94 -85 db db 7 table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc.
table 24. 16-bit adc characteristics (v refh = v dda , v refl = v ssa ) (continued) symbol description conditions 1 min. typ. 2 max. unit notes sfdr spurious free dynamic range 16 bit differential mode avg=32 16 bit single-ended mode avg=32 82 78 95 90 db db 7 e il input leakage error i in r as mv i in = leakage current (refer to the mcu?s voltage and current operating ratings) temp sensor slope 40?c to 105?c 1.715 mv/?c v temp25 temp sensor voltage 25?c 719 mv 1. all accuracy numbers assume the adc is calibrated with v refh = v dda 2. typical values assume v dda = 3.0 v, temp = 25?c, f adck = 2.0 mhz unless otherwise stated. typical values are for reference only and are not tested in production. 3. the adc supply current depends on the adc conversion clock speed, conversion rate and the adlpc bit (low power). for lowest power operation the adlpc bit should be set, the hsc bit should be clear with 1mhz adc conversion clock speed. 4. 1 lsb = (v refh - v refl )/2 n 5. adc conversion clock <16mhz, max hardware averaging (avge = %1, avgs = %11) 6. input data is 100 hz sine wave. adc conversion clock <12mhz. 7. input data is 1 khz sine wave. adc conversion clock <12mhz. peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 39
figure 11. typical enob vs. adc_clk for 16-bit differential mode figure 12. typical enob vs. adc_clk for 16-bit single-ended mode peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. 40 freescale semiconductor, inc.
6.6.2 cmp and 6-bit dac electrical specifications table 25. comparator and 6-bit dac electrical specifications symbol description min. typ. max. unit v dd supply voltage 1.71 3.6 v i ddhs supply current, high-speed mode (en=1, pmode=1) 200 ?a i ddls supply current, low-speed mode (en=1, pmode=0) 20 ?a v ain analog input voltage v ss 0.3 v dd v v aio analog input offset voltage 20 mv v h analog comparator hysteresis 1 cr0[hystctr] = 00 cr0[hystctr] = 01 cr0[hystctr] = 10 cr0[hystctr] = 11 5 10 20 30 mv mv mv mv v cmpoh output high v dd 0.5 v v cmpol output low 0.5 v t dhs propagation delay, high-speed mode (en=1, pmode=1) 20 50 200 ns t dls propagation delay, low-speed mode (en=1, pmode=0) 80 250 600 ns analog comparator initialization delay 2 40 ?s i dac6b 6-bit dac current adder (enabled) 7 ?a inl 6-bit dac integral non-linearity 0.5 0.5 lsb 3 dnl 6-bit dac differential non-linearity 0.3 0.3 lsb 1. typical hysteresis is measured with input voltage range limited to 0.6 to v dd -0.6v. 2. comparator initialization delay is defined as the time between software writes to change control inputs (writes to dacen, vrsel, psel, msel, vosel) and the comparator output settling to a stable level. 3. 1 lsb = v reference /64 peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 41
0.04 0.05 0.06 0.07 0.08 p hystereris (v) 00 01 10 hystctr setting 0 0.01 0.02 0.03 0.1 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 cm 10 11 vin level (v) figure 13. typical hysteresis vs. vin level (vdd=3.3v, pmode=0) peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. 42 freescale semiconductor, inc.
0 08 0.1 0.12 0.14 0.16 0.18 p hystereris (v) 00 01 10 hystctr setting 0 0.02 0.04 0.06 0.08 0.1 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 cm p 10 11 vin level (v) figure 14. typical hysteresis vs. vin level (vdd=3.3v, pmode=1) 6.7 timers see general switching specifications . 6.8 communication interfaces 6.8.1 usb electrical specifications the usb electricals for the usb on-the-go module conform to the standards documented by the universal serial bus implementers forum. for the most up-to-date standards, visit http://www.usb.org. peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 43
6.8.2 usb dcd electrical specifications table 26. usb dcd electrical specifications symbol description min. typ. max. unit v dp_src usb_dp source voltage (up to 250 ?a) 0.5 0.7 v v lgc threshold voltage for logic high 0.8 2.0 v i dp_src usb_dp source current 7 10 13 ?a i dm_sink usb_dm sink current 50 100 150 ?a r dm_dwn d- pulldown resistance for data pin contact detect 14.25 24.8 k? v dat_ref data detect voltage 0.25 0.33 0.4 v 6.8.3 usb vreg electrical specifications table 27. usb vreg electrical specifications symbol description min. typ. 1 max. unit notes vregin input supply voltage 2.7 5.5 v i ddon quiescent current run mode, load current equal zero, input supply (vregin) > 3.6 v 120 186 ?a i ddstby quiescent current standby mode, load current equal zero 1.1 1.54 ?a i ddoff quiescent current shutdown mode vregin = 5.0 v and temperature=25c across operating voltage and temperature 650 4 na ?a i loadrun maximum load current run mode 120 ma i loadstby maximum load current standby mode 1 ma v reg33out regulator output voltage input supply (vregin) > 3.6 v run mode standby mode 3 2.1 3.3 2.8 3.6 3.6 v v v reg33out regulator output voltage input supply (vregin) < 3.6 v, pass-through mode 2.1 3.6 v 2 c out external output capacitor 1.76 2.2 8.16 ?f esr external output capacitor equivalent series resistance 1 100 m? i lim short circuit current 290 ma 1. typical values assume vregin = 5.0 v, temp = 25 ?c unless otherwise stated. 2. operating in pass-through mode: regulator output voltage equal to the input voltage minus a drop proportional to i load . peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. 44 freescale semiconductor, inc.
6.8.4 dspi switching specifications (limited voltage range) the dma serial peripheral interface (dspi) provides a synchronous serial bus with master and slave operations. many of the transfer attributes are programmable. the tables below provide dspi timing characteristics for classic spi timing modes. refer to the dspi chapter of the reference manual for information on the modified transfer formats used for communicating with slower peripheral devices. table 28. master mode dspi timing (limited voltage range) num description min. max. unit notes operating voltage 2.7 3.6 v frequency of operation 25 mhz ds1 dspi_sck output cycle time 2 x t bus ns ds2 dspi_sck output high/low time (t sck /2) 2 (t sck /2) + 2 ns ds3 dspi_pcs n valid to dspisc delay (t bs x 2) 2 ns 1 ds dspisc to dspipcs n invalid delay (t bs x 2) 2 ns 2 ds5 dspisc to dspist valid ns ds dspisc to dspist invalid 0 ns ds dspisin to dspisc input setup 1 ns ds dspisc to dspisin input hold 0 ns 1. the delay is programmable in spixctarnpssc and spixctarncssc. 2. the delay is programmable in spixctarnpasc and spixctarnasc. ds ds ds1 ds2 ds ds first data last data ds5 first data data last data ds data dspipcsn dspisc (cpl0) dspisin dspist figure 15. dspi classic spi timing master mode table 2. slave mode dspi timing (limited voltage range) num description min. max. nit perating voltage 2. . freuency of operation 12.5 mhz table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 5
table 29. slave mode dspi timing (limited voltage range) (continued) num description min. max. unit ds9 dspi_sck input cycle time 4 x t bus ns ds10 dspi_sck input high/low time (t sck /2) 2 (t sck /2) + 2 ns ds11 dspi_sck to dspi_sout valid 20 ns ds12 dspi_sck to dspi_sout invalid 0 ns ds13 dspi_sin to dspi_sck input setup 2 ns ds14 dspi_sck to dspi_sin input hold 7 ns ds15 dspi_ss active to dspi_sout driven 14 ns ds16 dspi_ss inactive to dspi_sout not driven 14 ns first data last data first data data last data data ds15 ds10 ds9 ds16 ds11 ds12 ds14 ds13 dspi_ss dspi_sck (cpol=0) dspi_sout dspi_sin figure 16. dspi classic spi timing slave mode 6.8.5 dspi switching specifications (full voltage range) the dma serial peripheral interface (dspi) provides a synchronous serial bus with master and slave operations. many of the transfer attributes are programmable. the tables below provides dspi timing characteristics for classic spi timing modes. refer to the dspi chapter of the reference manual for information on the modified transfer formats used for communicating with slower peripheral devices. table 30. master mode dspi timing (full voltage range) num description min. max. unit notes operating voltage 1.71 3.6 v 1 frequency of operation 12.5 mhz ds1 dspi_sck output cycle time 4 x t bus ns ds2 dspi_sck output high/low time (t sck /2) - 4 (t sck/2) + 4 ns table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc.
table 30. master mode dspi timing (full voltage range) (continued) num description min. max. unit notes ds3 dspi_pcs n valid to dspisc delay (t bs x 2) ns 2 ds dspisc to dspipcs n invalid delay (t bs x 2) ns ds5 dspisc to dspist valid .5 ns ds dspisc to dspist invalid -1.2 ns ds dspisin to dspisc input setup 1.1 ns ds dspisc to dspisin input hold 0 ns 1. the dspi module can operate across the entire operating voltage for the processor, but to run across the full voltage range the maximum freuency of operation is reduced. 2. the delay is programmable in spixctarnpssc and spixctarncssc. . the delay is programmable in spixctarnpasc and spixctarnasc. ds ds ds1 ds2 ds ds first data last data ds5 first data data last data ds data dspipcsn dspisc (cpl0) dspisin dspist figure 1. dspi classic spi timing master mode table 1. slave mode dspi timing (full voltage range) num description min. max. nit perating voltage 1.1 . freuency of operation .25 mhz ds dspisc input cycle time x t bs ns ds10 dspisc input high/low time (t sc /2) - (t sc/2) ns ds11 dspisc to dspist valid 2 ns ds12 dspisc to dspist invalid 0 ns ds1 dspisin to dspisc input setup .2 ns ds1 dspisc to dspisin input hold ns ds15 dspiss active to dspist driven 1 ns ds1 dspiss inactive to dspist not driven 1 ns peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc.
first data last data first data data last data data ds15 ds10 ds9 ds16 ds11 ds12 ds14 ds13 dspi_ss dspi_sck (cpol=0) dspi_sout dspi_sin figure 18. dspi classic spi timing slave mode 6.8.6 i 2 c switching specifications see general switching specifications . 6.8.7 uart switching specifications see general switching specifications . 6.8.8 i2s/sai switching specifications this section provides the ac timing for the i2s/sai module in master mode (clocks are driven) and slave mode (clocks are input). all timing is given for noninverted serial clock polarity (tcr2[bcp] is 0, rcr2[bcp] is 0) and a noninverted frame sync (tcr4[fsp] is 0, rcr4[fsp] is 0). if the polarity of the clock and/or the frame sync have been inverted, all the timing remains valid by inverting the bit clock signal (bclk) and/or the frame sync (fs) signal shown in the following figures. peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. 48 freescale semiconductor, inc.
6.8.8.1 normal run, wait and stop mode performance over the full operating voltage range this section provides the operating performance over the full operating voltage for the device in normal run, wait and stop modes. table 32. i2s/sai master mode timing num. characteristic min. max. unit operating voltage 1.71 3.6 v s1 i2s_mclk cycle time 40 ns s2 i2s_mclk pulse width high/low 45% 55% mclk period s3 i2s_tx_bclk/i2s_rx_bclk cycle time (output) 80 ns s4 i2s_tx_bclk/i2s_rx_bclk pulse width high/low 45% 55% bclk period s5 i2s_tx_bclk/i2s_rx_bclk to i2s_tx_fs/ i2s_rx_fs output valid 15 ns s6 i2s_tx_bclk/i2s_rx_bclk to i2s_tx_fs/ i2s_rx_fs output invalid 0 ns s7 i2s_tx_bclk to i2s_txd valid 15 ns s8 i2s_tx_bclk to i2s_txd invalid 0 ns s9 i2s_rxd/i2s_rx_fs input setup before i2s_rx_bclk 25 ns s10 i2s_rxd/i2s_rx_fs input hold after i2s_rx_bclk 0 ns s1 s2 s2 s3 s4 s4 s5 s9 s7 s9 s10 s7 s8 s6 s10 s8 i2s_mclk (output) i2s_tx_bclk/ i2s_rx_bclk (output) i2s_tx_fs/ i2s_rx_fs (output) i2s_tx_fs/ i2s_rx_fs (input) i2s_txd i2s_rxd figure 19. i2s/sai timing master modes peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 49
table 33. i2s/sai slave mode timing num. characteristic min. max. unit operating voltage 1.71 3.6 v s11 i2s_tx_bclk/i2s_rx_bclk cycle time (input) 80 ns s12 i2s_tx_bclk/i2s_rx_bclk pulse width high/low (input) 45% 55% mclk period s13 i2s_tx_fs/i2s_rx_fs input setup before i2s_tx_bclk/i2s_rx_bclk 10 ns s14 i2s_tx_fs/i2s_rx_fs input hold after i2s_tx_bclk/i2s_rx_bclk 2 ns s15 i2s_tx_bclk to i2s_txd/i2s_tx_fs output valid 29 ns s16 i2s_tx_bclk to i2s_txd/i2s_tx_fs output invalid 0 ns s17 i2s_rxd setup before i2s_rx_bclk 10 ns s18 i2s_rxd hold after i2s_rx_bclk 2 ns s19 i2s_tx_fs input assertion to i2s_txd output valid 1 21 ns 1. applies to first bit in each frame and only if the tcr4[fse] bit is clear s15 s13 s15 s17 s18 s15 s16 s16 s14 s16 s11 s12 s12 i2s_tx_bclk/ i2s_rx_bclk (input) i2s_tx_fs/ i2s_rx_fs (output) i2s_txd i2s_rxd i2s_tx_fs/ i2s_rx_fs (input) s19 figure 20. i2s/sai timing slave modes 6.8.8.2 vlpr, vlpw, and vlps mode performance over the full operating voltage range this section provides the operating performance over the full operating voltage for the device in vlpr, vlpw, and vlps modes. peripheral operating requirements and behaviors k20 sub-family data sheet, rev. 4 5/2012. 50 freescale semiconductor, inc.
table 34. i2s/sai master mode timing in vlpr, vlpw, and vlps modes (full voltage range) num. characteristic min. max. unit operating voltage 1.71 3.6 v s1 i2s_mclk cycle time 62.5 ns s2 i2s_mclk pulse width high/low 45% 55% mclk period s3 i2s_tx_bclk/i2s_rx_bclk cycle time (output) 250 ns s4 i2s_tx_bclk/i2s_rx_bclk pulse width high/low 45% 55% bclk period s5 i2s_tx_bclk/i2s_rx_bclk to i2s_tx_fs/ i2s_rx_fs output valid 45 ns s6 i2s_tx_bclk/i2s_rx_bclk to i2s_tx_fs/ i2s_rx_fs output invalid 0 ns s7 i2s_tx_bclk to i2s_txd valid 45 ns s8 i2s_tx_bclk to i2s_txd invalid 0 ns s9 i2s_rxd/i2s_rx_fs input setup before i2s_rx_bclk 45 ns s10 i2s_rxd/i2s_rx_fs input hold after i2s_rx_bclk 0 ns s1 s2 s2 s3 s4 s4 s5 s9 s7 s9 s10 s7 s8 s6 s10 s8 i2s_mclk (output) i2s_tx_bclk/ i2s_rx_bclk (output) i2s_tx_fs/ i2s_rx_fs (output) i2s_tx_fs/ i2s_rx_fs (input) i2s_txd i2s_rxd figure 21. i2s/sai timing master modes table 35. i2s/sai slave mode timing in vlpr, vlpw, and vlps modes (full voltage range) num. characteristic min. max. unit operating voltage 1.71 3.6 v s11 i2s_tx_bclk/i2s_rx_bclk cycle time (input) 250 ns table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. freescale semiconductor, inc. 51
table 35. i2s/sai slave mode timing in vlpr, vlpw, and vlps modes (full voltage range) (continued) num. characteristic min. max. unit s12 i2s_tx_bclk/i2s_rx_bclk pulse width high/low (input) 45% 55% mclk period s13 i2s_tx_fs/i2s_rx_fs input setup before i2s_tx_bclk/i2s_rx_bclk 30 ns s14 i2s_tx_fs/i2s_rx_fs input hold after i2s_tx_bclk/i2s_rx_bclk 3 ns s15 i2s_tx_bclk to i2s_txd/i2s_tx_fs output valid 63 ns s16 i2s_tx_bclk to i2s_txd/i2s_tx_fs output invalid 0 ns s17 i2s_rxd setup before i2s_rx_bclk 30 ns s18 i2s_rxd hold after i2s_rx_bclk 2 ns s19 i2s_tx_fs input assertion to i2s_txd output valid 1 72 ns 1. applies to first bit in each frame and only if the tcr4[fse] bit is clear s15 s13 s15 s17 s18 s15 s16 s16 s14 s16 s11 s12 s12 i2s_tx_bclk/ i2s_rx_bclk (input) i2s_tx_fs/ i2s_rx_fs (output) i2s_txd i2s_rxd i2s_tx_fs/ i2s_rx_fs (input) s19 figure 22. i2s/sai timing slave modes 6.9 human-machine interfaces (hmi) 6.9.1 tsi electrical specifications table 36. tsi electrical specifications symbol description min. typ. max. unit notes v ddtsi operating voltage 1.71 3.6 v c ele target electrode capacitance range 1 20 500 pf 1 table continues on the next page... peripheral operating reuirements and behaviors 20 sub-family data sheet, rev. 5/2012. 52 freescale semiconductor, inc.
table 36. tsi electrical specifications (continued) symbol description min. typ. max. unit notes f refmax reference oscillator frequency 8 15 mhz 2 , 3 f elemax electrode oscillator frequency 1 1.8 mhz 2 , 4 c ref internal reference capacitor 1 pf v delta oscillator delta voltage 500 mv 2 , 5 i ref reference oscillator current source base current 2 32 2 32 = 6 = 16 = 2 = 32
7 dimensions 7.1 obtaining package dimensions package dimensions are provided in package drawings. to find a package drawing, go to http://www.freescale.com and perform a keyword search for the drawing?s document number: if you want the drawing for this package then use this document number 32-pin qfn 98are10566d 8 pinout 8.1 k20 signal multiplexing and pin assignments the following table shows the signals available on each pin and the locations of these pins on the devices supported by this document. the port control module is responsible for selecting which alt functionality is available on each pin. 32 qfn pin name default alt0 alt1 alt2 alt3 alt4 alt5 alt6 alt7 ezport 1 vdd vdd vdd 2 vss vss vss 3 usb0_dp usb0_dp usb0_dp 4 usb0_dm usb0_dm usb0_dm 5 vout33 vout33 vout33 6 vregin vregin vregin 7 vdda vdda vdda 8 vssa vssa vssa 9 xtal32 xtal32 xtal32 10 extal32 extal32 extal32 11 vbat vbat vbat 12 pta0 jtag_tclk/ swd_clk/ ezp_clk tsi0_ch1 pta0 uart0_cts_ b/ uart0_col_b ftm0_ch5 jtag_tclk/ swd_clk ezp_clk 13 pta1 jtag_tdi/ ezp_di tsi0_ch2 pta1 uart0_rx ftm0_ch6 jtag_tdi ezp_di dimensions k20 sub-family data sheet, rev. 4 5/2012. 54 freescale semiconductor, inc.
32 qfn pin name default alt0 alt1 alt2 alt3 alt4 alt5 alt6 alt7 ezport 14 pta2 jtag_tdo/ trace_swo/ ezp_do tsi0_ch3 pta2 uart0_tx ftm0_ch7 jtag_tdo/ trace_swo ezp_do 15 pta3 jtag_tms/ swd_dio tsi0_ch4 pta3 uart0_rts_b ftm0_ch0 jtag_tms/ swd_dio 16 pta4/ llwu_p3 nmi_b/ ezp_cs_b tsi0_ch5 pta4/ llwu_p3 ftm0_ch1 nmi_b ezp_cs_b 17 pta18 extal0 extal0 pta18 ftm0_flt2 ftm_clkin0 18 pta19 xtal0 xtal0 pta19 ftm1_flt0 ftm_clkin1 lptmr0_alt1 19 reset_b reset_b reset_b 20 ptb0/ llwu_p5 adc0_se8/ tsi0_ch0 adc0_se8/ tsi0_ch0 ptb0/ llwu_p5 i2c0_scl ftm1_ch0 ftm1_qd_ pha 21 ptb1 adc0_se9/ tsi0_ch6 adc0_se9/ tsi0_ch6 ptb1 i2c0_sda ftm1_ch1 ftm1_qd_ phb 22 ptc1/ llwu_p6 adc0_se15/ tsi0_ch14 adc0_se15/ tsi0_ch14 ptc1/ llwu_p6 spi0_pcs3 uart1_rts_b ftm0_ch0 i2s0_txd0 23 ptc2 adc0_se4b/ cmp1_in0/ tsi0_ch15 adc0_se4b/ cmp1_in0/ tsi0_ch15 ptc2 spi0_pcs2 uart1_cts_b ftm0_ch1 i2s0_tx_fs 24 ptc3/ llwu_p7 cmp1_in1 cmp1_in1 ptc3/ llwu_p7 spi0_pcs1 uart1_rx ftm0_ch2 i2s0_tx_bclk 25 ptc4/ llwu_p8 disabled ptc4/ llwu_p8 spi0_pcs0 uart1_tx ftm0_ch3 cmp1_out 26 ptc5/ llwu_p9 disabled ptc5/ llwu_p9 spi0_sck lptmr0_alt2 i2s0_rxd0 cmp0_out 27 ptc6/ llwu_p10 cmp0_in0 cmp0_in0 ptc6/ llwu_p10 spi0_sout pdb0_extrg i2s0_rx_bclk i2s0_mclk 28 ptc7 cmp0_in1 cmp0_in1 ptc7 spi0_sin usb_sof_ out i2s0_rx_fs 29 ptd4/ llwu_p14 disabled ptd4/ llwu_p14 spi0_pcs1 uart0_rts_b ftm0_ch4 ewm_in 30 ptd5 adc0_se6b adc0_se6b ptd5 spi0_pcs2 uart0_cts_ b/ uart0_col_b ftm0_ch5 ewm_out_b 31 ptd6/ llwu_p15 adc0_se7b adc0_se7b ptd6/ llwu_p15 spi0_pcs3 uart0_rx ftm0_ch6 ftm0_flt0 32 ptd7 disabled ptd7 cmt_iro uart0_tx ftm0_ch7 ftm0_flt1 8.2 k20 pinouts the below figure shows the pinout diagram for the devices supported by this document. many signals may be multiplexed onto a single pin. to determine what signals can be used on which pin, see the previous section. pinout k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 55
32 31 30 29 28 27 26 25 ptd7 ptd6/llwu_p15 ptd5 ptd4/llwu_p14 ptc7 ptc6/llwu_p10 ptc5/llwu_p9 ptc4/llwu_p8 pta0 vbat extal32 xtal32 12 11 10 9 pta4/llwu_p3 pta3 pta2 pta1 16 15 14 13 ptb0/llwu_p5 reset_b pta19 pta18 24 23 22 21 20 19 18 17 ptc3/llwu_p7 ptc2 ptc1/llwu_p6 ptb1 vssa vdda vregin vout33 usb0_dm usb0_dp vss vdd 8 7 6 5 4 3 2 1 figure 23. k20 32 qfn pinout diagram 9 revision history the following table provides a revision history for this document. table 37. revision history rev. no. date substantial changes 2 2/2012 initial public release 3 4/2012 replaced tbds throughout. updated "power mode transition operating behaviors" table. updated "power consumption operating behaviors" table. for "diagram: typical idd_run operating behavior" section, added "vlpr mode supply current vs. core frequency" figure. updated "emc radiated emissions operating behaviors" section. updated "thermal operating requirements" section. updated "mcg specifications" table. updated "vref full-range operating behaviors" table. updated "i2s/sai switching specifications" section. updated "tsi electrical specifications" table. table continues on the next page... revision history 20 sub-family data sheet, rev. 5/2012. 5 freescale semiconductor, inc.
table 37. revision history (continued) rev. no. date substantial changes 4 5/2012 for the "32khz oscillator frequency specifications", added specifications for an externally driven clock. renamed section "flash current and power specfications" to section "flash high voltage current behaviors" and improved the specifications. for the "vref full-range operating behaviors" table, removed the ac (aging coefficient) specification. corrected the following dspi switching specifications: tightened ds5, ds6, and ds7; relaxed ds11 and ds13. for the "tsi electrical specifications", changed and clarified the example calculations for the maxsens specification. revision history k20 sub-family data sheet, rev. 4 5/2012. freescale semiconductor, inc. 57
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